Ion Track Formation Models in Silicon Carbide

Silicon Carbide (SiC) is a promising material for several applications such as nuclear application, electronic and space application. This material has been considered for use as a construction material for Dual Fluid Reactor, because of its good radiation resistance, high thermal conductivity, high melting temperature and good chemical stability. Although irradiation effects in SiC have been studied for decades, still not everything is comprehensively understood. In the talk, the effects of heavy ion irradiation on SiC will be presented. The aim of this presentation is to explain models which can be used to describe ion track formation in SiC. Different approaches as Coulomb explosion and thermal spike models will be considered.